Manufacturing method of a thin film semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming a first insulating film over a substrate in a multi-chamber apparatus having a plurality of film formation chambers;
• forming a second insulating film over the first insulating film in the multi-chamber apparatus;
• forming a semiconductor film comprising amorphous silicon over the second insulating film in the multi-chamber apparatus;
• cleaning one of the plurality of film formation chambers by a cleaning gas;
• taking the substrate out of the multi-chamber apparatus after the formation of the semiconductor film;
• crystallizing the semiconductor film outside the multi-chamber apparatus;
• and
• forming a gate insulating film over the semiconductor film,
• wherein each of the first insulating film, the second insulating film and the semiconductor film is formed by CVD, and
• wherein the first insulating film, the second insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus.

A method of manufacturing a semiconductor device comprising:

• forming a first insulating film over a substrate in one of a plurality of film formation chambers of a multi-chamber apparatus, the multi-chamber apparatus having a substrate transfer chamber connected to one of the plurality of film formation chambers;
• forming a second insulating film over the first insulating film in one of the plurality of film formation chambers of the multi-chamber apparatus;
• forming a semiconductor film comprising amorphous silicon over the second insulting film in one of the plurality of film formation chambers of the multi-chamber apparatus;
• taking the substrate out of the multi-chamber apparatus via the substrate transfer chamber after the formation of the semiconductor film;
• crystallizing the semiconductor film outside the multi-chamber apparatus;
• forming a gate insulating film over the semiconductor film;
• and
• forming a gate electrode over the gate insulating film,
• wherein each of the first insulating film, the second insulating film and the semiconductor film is formed by CVD, and
• wherein the first insulating film, the second insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus.

A method of manufacturing a semiconductor device comprising:

• forming a first insulating film over a substrate in one of a plurality of film formation chambers of a multi-chamber apparatus, the multi-chamber apparatus having a substrate transfer chamber connected to one of the plurality of film formation chambers;
• forming a second insulating film over the first insulating film in one of the plurality of film formation chambers of the multi-chamber apparatus;
• forming a semiconductor film comprising amorphous silicon over the second insulating film in one of the plurality of film formation chambers of the multi-chamber apparatus;
• cleaning one of the plurality of film formation chambers of the multi-chamber apparatus by a cleaning gas;
• taking the substrate out of the multi-chamber apparatus via the substrate transfer chamber after the formation of the semiconductor film;
• crystallizing the semiconductor film outside the multi-chamber apparatus;
• forming a gate insulating film over the semiconductor film;
• and
• forming a gate electrode over the gate insulating film,
• wherein each of the first insulating film, the second insulating film and the semiconductor film is formed by CVD, and
• wherein the first insulating film, the second insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus.

A method of manufacturing a semiconductor device comprising:

• forming a first insulating film over a substrate in one of a plurality of film formation chambers of a multi-chamber apparatus, the multi-chamber apparatus having a substrate transfer chamber connected to one of the plurality of film forming chambers;
• forming a second insulating film over the first insulating film in one of the plurality of film formation chambers of the multi-chambers apparatus;
• forming a semiconductor film comprising amorphous silicon over the second insulating film in one of the plurality of film formation chambers of the multi-chamber apparatus;
• taking the substrate out of the multi-chamber apparatus via the substrate transfer chamber after the formation of the semiconductor film;
• crystallizing the semiconductor film outside the multi-chamber apparatus;
• patterning the semiconductor film outside the multi-chamber apparatus;
• forming a gate insulating film over the semiconductor film;
• and
• forming a gate electrode over the gate insulating film;
• wherein each of the first insulating film, the second insulating film and the semiconductor film is formed by CVD, and
• wherein the first insulating film, the second insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus.

A method of manufacturing a semiconductor device comprising:

• forming a first insulating film over a substrate in one of a plurality of film formation chambers of a multi-chamber apparatus, the multi-chamber apparatus having a substrate transfer chamber connected to one of the plurality of film formation chambers;
• forming a second insulating film over the first insulating film in one of the plurality of film formation chambers of the multi-chamber apparatus;
• forming a semiconductor film comprising amorphous silicon over the second insulating film in one of the plurality of film formation chambers of the multi-chamber apparatus;
• cleaning one of the plurality of film formation chambers of the multi-chamber apparatus by a cleaning gas;
• taking the substrate out of the multi-chamber apparatus via the substrate transfer chamber after the formation of the semiconductor film;
• crystallizing the semiconductor film outside the multi-chamber apparatus;
• patterning the semiconductor film outside the multi-chamber apparatus;
• forming a gate insulating film over the semiconductor film;
• and
• forming a gate electrode over the gate insulating film,
• wherein each of the first insulating film, the second insulating film and the semiconductor film is formed by CVD, and
• wherein the first insulating film, the second insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus.