Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

A method of manufacturing a crystalline semiconductor film, the method comprising:

• providing a metallic element for promoting crystallization of an amorphous semiconductor film with a substrate while rotating the substrate at an equal rate;
• rotating the substrate at a rotational acceleration speed of 5 to 120 rpm/sec after providing the metallic element for promoting crystallization of the amorphous semiconductor film with the substrate;
• rotating the substrate at an equal rate after rotating the substrate at the rotational acceleration;
• forming an amorphous semiconductor film over the substrate provided with the metallic element for promoting crystallization of the amorphous semiconductor film;
• and
• forming the crystalline semiconductor film by heat treating the amorphous semiconductor film.

A method of manufacturing a crystalline semiconductor film, the method comprising:

• forming an amorphous semiconductor film over a substrate;
• forming an insulating film on the amorphous semiconductor film as a mask;
• forming an opening in the insulating film;
• providing the opening with a metallic element for promoting crystallization of the amorphous semiconductor film while rotating the substrate at an equal rate;
• rotating the substrate at a rotational acceleration speed of 5 to 120 rpm/sec or after providing the opening with the metallic element for promoting crystallization of the amorphous semiconductor film;
• rotating the substrate at an equal r ate after rotating the substrate at the rotational acceleration;
• and
• forming the crystalline semiconductor film by heat treating the amorphous semiconductor film.