US 7,452,789 B2 · Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element

Abstract

A method for forming an underlayer composed of a GaN-based compound semiconductor is provided. In this method, at the time of epitaxial growth of an underlayer on the surface of a sapphire substrate, no gap is generated between the underlayer and the surface of the sapphire substrate. The method for forming an underlayer composed of a GaN-based compound semiconductor includes the steps of forming strip seed layers composed of a GaN-based compound semiconductor on the surface of a sapphire substrate, forming a crystal growth promoting layer composed of a GaN-based compound semiconductor on the top surfaces and both the side surfaces of the seed layers, and on the exposed surfaces of the sapphire substrate, and epitaxially growing an underlayer composed of a GaN-based compound semiconductor from the parts of the crystal growth promoting layer.

Claims17

Dependent claims

A method for forming an underlayer composed of a GaN-based compound semiconductor, the method comprising the steps of:

(A) forming a strip seed layer composed of a GaN-based compound semiconductor on a surface of a sapphire substrate;
(B) forming a crystal growth promoting layer composed of a GaN-based compound semiconductor on a top surface and both side surfaces of the seed layer, and on an exposed surface of the sapphire substrate;
and
(C) epitaxially growing an underlayer composed of a GaN-based compound semiconductor from a part of the crystal growth promoting layer on the top surface of the seed layer, a part of the crystal growth promoting layer on both the side surfaces of the seed layer, and a part of the crystal growth promoting layer on the exposed surface of the sapphire substrate.

1 more element

A method for forming an underlayer composed of a GaN-based compound semiconductor, the method comprising the steps of:

(A) forming on a surface of an R-plane sapphire substrate a strip seed layer that is composed of a GaN-based compound semiconductor and has a crystal growth inhibiting substance on a top surface of the seed layer;
and
(B) epitaxially growing an underlayer composed of a GaN-based compound semiconductor from a top surface and both side surfaces of the seed layer, and from an exposed surface of the sapphire substrate.

Dependencies are inferred from the claim text.

Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element

Life of this patent

Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element

Life of this patent

Abstract

Claims17