Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Naoto Kusumoto, Koichiro Tanaka
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Abstract
A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 where assuming that a maximum energy is 1, L1 is a beam width of two points having an energy of 0.95 and L1+L2+L3 is a beam width of two points having an energy of 0.70, L2 and L3 occupying two peripheral portions of the beam width. According to another aspect of the invention, a compound-eye-like fly-eye lens for expanding a pulse laser beam in a sectional manner is provided upstream of a cylindrical lens for converging the laser beam into a linear beam.
Claims33
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- and
- irradiating the semiconductor film with a laser beam,
- wherein the laser beam has an energy profile in a width direction thereof which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 on an illumination surface of the semiconductor film where assuming that a maximum energy is 1, L1 is a first beam width of two points having an energy of 0.95 and L1+L2+L3 is a second beam width of two points having an energy of 0.70, L2 and L3 occupying two peripheral portions of the first beam width.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- and
- irradiating the semiconductor film with a laser beam so that one point of the semiconductor film is irradiated overlappingly with the laser beam plural times,
- wherein the laser beam has an energy profile in a width direction thereof which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 on an illumination surface of the semiconductor film where assuming that a maximum energy is 1, L1 is a first beam width of two points having an energy of 0.95 and L1+L2+L3 is a second beam width of two points having an energy of 0.70, L2 and L3 occupying two peripheral portions of the first beam width.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- and
- irradiating the semiconductor film with a laser beam, wherein the laser beam has a trapezoidal energy profile in a width direction thereof which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 on an illumination surface of the semiconductor film where assuming that a maximum energy is 1, L1 is a first beam width of two points having an energy of 0.95 and L1+L2+L3 is a second beam width of two points having an energy of 0.70, L2 and L3 occupying two peripheral portions of the first beam width.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- generating a laser beam;
- expanding and shaping the laser beam with a beam expander;
- expanding, sectionally, the expanded and shaped laser beam with a fly-eye lens;
- converging the sectionally expanded laser beam into a linear laser beam with a first cylindrical lens;
- improving uniformity of the linear laser beam in a longitudinal direction thereof with a second cylindrical lens;
- and
- irradiating the semiconductor film with the linear laser beam, wherein the linear laser beam has an energy profile in a width direction thereof which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 on an illumination surface of the semiconductor film where assuming that a maximum energy is 1, L1 is a first beam width of two points having an energy of 0.95 and L1+L2+L3 is a second beam width of two points having an energy of 0.70, L2 and L3 occupying two peripheral portions of the first beam width.
Dependencies are inferred from the claim text.