Fabrication method of semiconductor integrated circuit device

A fabrication method of a semiconductor integrated circuit device comprising the steps of:

• (a) forming a circuit pattern over a first main surface of a semiconductor wafer having a first thickness;
• (b) bonding a first sheet or a plate-like member to the first main surface by a first pressure sensitive adhesive;
• (c) grinding or etching the second main surface of the semiconductor wafer to make the semiconductor wafer to a second thickness;
• (d) forcibly oxidizing the second main surface of the semiconductor wafer;
• and
• (e) releasing or separating the first sheet or the plate-like member adhered to the first main surface of the semiconductor wafer, and bonding a second sheet or a plate-like member to the second main surface of the semiconductor wafer by a second pressure sensitive adhesive.

A fabrication method of a semiconductor integrated circuit device comprising the steps of:

• (a) providing a semiconductor wafer having a first main surface and a second main surface which is opposite to said first main surface, said semiconductor wafer having a circuit pattern formed over said first main surface and a first thickness;
• (b) grinding said second main surface of said semiconductor wafer, thereby making said semiconductor wafer have a second thickness, which is thinner than said first thickness;
• (c) after the step(b), forcibly forming an oxidation film on said second main surface of said semiconductor wafer, so as to form a forcibly formed oxidation film;
• (d) after the step(c), adhering a dicing tape over said second main surface of said semiconductor wafer such that said dicing tape contacts with said forcibly formed oxidation film;
• (e) after the step(d), dicing said semiconductor wafer, thereby dividing said semiconductor wafer into individual chips;
• and
• (f) after the step(e), removing said individual chips from said dicing tape.