Method for manufacturing thin film integrated circuit, and element substrate
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshitaka Dozen, Tomoko Tamura, Takuya Tsurume, Koji Dairiki
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Abstract
Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.
Claims27
A method for manufacturing a thin film integrated circuit, comprising the steps of:
- forming a metal film comprising a metal over an insulating substrate;
- forming a metal compound layer comprising a compound of the metal, said compound selected from the group consisting of an oxide, a nitride and a nitride oxide;
- forming a plurality of thin film integrated circuits over said metal compound layer;
- selectively forming a groove between the plurality of thin film integrated circuits to expose a portion of said metal compound layer and form a connection region which is a part of the plurality of the thin film integrated circuits;
- and
- separating the insulating substrate by introducing an etching material comprising a halogen fluoride into said groove so that said metal film and said metal compound layer are removed with the plurality of thin film integrated circuits fixed to each other by the connection region.
A method for manufacturing a thin film integrated circuit, comprising the steps of:
- forming a metal film comprising a metal over an insulating substrate;
- forming a metal compound layer comprising a compound of the metal, said compound selected from the group consisting of an oxide, a nitride and a nitride oxide;
- forming a plurality of thin film integrated circuits over said metal compound layer;
- selectively forming a groove between the plurality of thin film integrated circuits to expose a portion of said metal compound layer and form a connection region which is a part of the plurality of the thin film integrated circuits;
- separating the insulating substrate by introducing an etching material comprising a halogen fluoride into said groove so that said metal film and said metal compound layer are removed with the plurality of thin film integrated circuits fixed to each other by the connection region;
- and
- attaching an antenna to the plurality of thin film integrated circuits which are connected.
A method for manufacturing a thin film integrated circuit, comprising the steps of:
- forming a metal film comprising a metal over an insulating substrate;
- forming a metal compound layer comprising a compound of the metal, said compound selected from the group consisting of an oxide, a nitride and a nitride oxide;
- forming a plurality of thin film integrated circuits over said metal compound layer;
- selectively forming a groove between the plurality of thin film integrated circuits to expose a portion of said metal compound layer and form a connection region which is a part of the plurality of the thin film integrated circuits;
- separating the insulating substrate by introducing an etching material comprising a halogen fluoride into said groove so that said metal film and said metal compound layer are removed with the plurality of thin film integrated circuits fixed to each other by the connection region;
- attaching the plurality of thin film integrated circuits which are connected to a flexible substrate;
- and
- attaching an antenna to the plurality of thin film integrated circuits which are connected.
An element substrate comprising:
- an insulating substrate provided with a plurality of thin film integrated circuits with a metal film comprising a metal and a metal compound layer comprising a compound of the metal, said compound selected from the group consisting of an oxide, a nitride and a nitride oxide therebetween;
- and
- a substrate provided opposite to the insulating substrate,
- wherein the plurality of thin film integrated circuits is connected by a connected region,
- the substrate provided opposite to the insulating substrate includes an opening,
- a groove is provided between the thin film integrated circuits to correspond to the opening, and
- an opening is provided in the thin film integrated circuits.
Dependencies are inferred from the claim text.