Multiple device types including an inverted-T channel transistor and method therefor
AssigneeFreescale Semiconductor, Inc.
InventorsByoung W. Min, James D. Burnett, Leo Mathew
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Abstract
A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.
Claims6
A method for making a static random access memory (SRAM) cell having a pull-down transistor, a pull-up transistor, and a pass-gate transistor, comprising:
- forming the pull-down transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region;
- forming the pull-up transistor with a vertical active region and without any horizontal active region;
- and
- forming the pass-gate transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.
Dependencies are inferred from the claim text.