Finned memory cells and the fabrication thereof
AssigneeMicron Technology, Inc.
InventorSeiichi Aritome
Life of this patent
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Abstract
Methods and apparatus are provided. For an embodiment, a plurality fins is formed in a substrate so that the fins protrude from a substrate. After the plurality fins is formed, the fins are isotropically etched to reduce a width of the fins and to round an upper surface of the fins. A first dielectric layer is formed overlying the isotropically etched fins. A first conductive layer is formed overlying the first dielectric layer. A second dielectric layer is formed overlying the first conductive layer. A second conductive layer is formed overlying the second dielectric layer.
Claims14
A method of forming a memory array, comprising:
- forming a plurality fins in a substrate that protrude from the substrate;
- after forming the plurality fins, isotropically etching the fins to reduce a width of the fins and to round an upper surface of the fins;
- forming a first dielectric layer overlying the isotropically etched fins;
- forming a first conductive layer overlying the first dielectric layer;
- forming a second dielectric layer overlying the first conductive layer;
- and
- forming a second conductive layer overlying the second dielectric layer.
A method of forming a memory array, comprising:
- forming a plurality of isolation regions in a substrate;
- forming a plurality of first fins in the substrate that protrude from the substrate so that an isolation region is located between successive first fins;
- after forming the plurality of first fins, isotropically etching the first fins to reduce a width of the first fins and to round an upper surface of the first fins;
- forming a first dielectric layer overlying the isotropically etched first fins;
- forming a first conductive layer overlying the first dielectric layer;
- forming a plurality of second fins in the first conductive layer that protrude from the first conductive layer;
- forming a second dielectric layer overlying the first conductive layer, including the second fins;
- and
- forming a second conductive layer overlying the second dielectric layer.
Dependencies are inferred from the claim text.