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US 7,452,749 B2Granted
Method for manufacturing flip-chip type semiconductor device featuring nickel electrode pads, and plating apparatus used in such method
AssigneeNEC Electronics Corporation
InventorHiroaki Tachibana
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Abstract
In a method for manufacturing a semiconductor device, either a nickel layer or a nickel-based metal layer is formed on a semiconductor substrate by using a plating process. Then, either the nickel layer or the nickel-based metal layer is washed with one of an aqueous hydrochloric acid solution and an aqueous sulfuric acid solution.
Claims16
A method for manufacturing a semiconductor device, which comprises:
- forming a photoresist layer over a semiconductor substrate;
- forming openings in said photoresist layer;
- forming one of a nickel layer and a nickel-based metal layer on or above said semiconductor substrate in each of said openings by using a first plating process;
- washing said semiconductor substrate, on or above which said one of said nickel layer and said nickel-based metal layer is formed in each of said openings, with a pure water;
- washing said semiconductor substrate, which is washed with said pure water, with one of an aqueous hydrochloric acid solution and an aqueous sulfuric acid solution;
- after said washing said semiconductor substrate with one of an aqueous hydrochloric acid solution and an aqueous sulfuric acid solution, forming a protective metal layer on said one of said nickel layer and said nickel-based metal layer in each of said openings by using a second plating process;
- and
- after said forming said protective metal layer on said one of said nickel layer and said nickel-based metal layer in each of said openings, removing said photoresist layer from said semiconductor substrate.
5 more elements
Dependencies are inferred from the claim text.