Method of separating semiconductor dies

A method of fabricating a plurality of semiconductor dies, comprising:

• forming one or more semiconductor layers on a substrate;
• defining the plurality of semiconductor dies separated by streets in the semiconductor layers;
• depositing a plurality of metal layers above the semiconductor layers;
• depositing a barrier layer above the metal layers;
• removing at least a portion of the barrier layer and the metal layers disposed in the streets;
• forming a first handling layer above the barrier layer;
• removing the substrate to expose a surface of the semiconductor layers;
• adding a second handling layer to the exposed surface of the semiconductor layers;
• removing the first handling layer to expose the barrier layer;
• applying an adhesive to the barrier layer;
• and
• removing the second handling layer.

A method of fabricating a plurality of semiconductor dies, comprising:

• forming one or more semiconductor layers on a substrate;
• defining the plurality of semiconductor dies separated by streets in the semiconductor layers;
• depositing one or more connected conductor layers above the semiconductor layers;
• forming stop electroplating (EP) areas in the streets;
• depositing a plurality of metal layers above the connected conductor layers, wherein the stop EP areas discourage metal deposition in at least portions of the streets;
• removing the stop EP areas;
• removing at least a portion of the connected conductor layers disposed in the streets;
• forming a first handling layer above the metal layers;
• removing the substrate to expose a surface of the semiconductor layers;
• adding a second handling layer to the exposed surface of the semiconductor layers;
• removing the first handling layer to expose a surface of the metal layers;
• applying an adhesive to the exposed surface of the metal layers;
• and
• removing the second handling layer.

A method of fabricating a plurality of semiconductor dies, comprising:

• forming one or more semiconductor layers on a substrate;
• defining the plurality of semiconductor dies separated by streets in the semiconductor layers;
• depositing one or more connected conductor layers above the semiconductor layers;
• forming stop electroplating (EP) areas in the streets;
• depositing a plurality of metal layers above the connected conductor layers,
• wherein the stop EP areas discourage metal deposition in at least portions of the streets;
• and
• removing the stop EP areas.

A method of fabricating a plurality of semiconductor dies, comprising:

• forming one or more semiconductor layers on a substrate;
• defining the plurality of semiconductor dies separated by streets in the semiconductor layers;
• depositing one or more connected conductor layers above the semiconductor layers;
• forming stop electroplating (EP) areas in the streets;
• depositing a plurality of metal layers above the connected conductor layers,
• wherein the stop EP areas discourage metal deposition in at least portions of the streets;
• removing the stop EP areas;
• depositing a barrier layer to protect the connected conductor layers and the metal layers;
• and
• removing the substrate to expose a surface of the semiconductor layers.