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US 7,452,426 B2Granted
Process solutions containing surfactants used as post-chemical mechanical planarization treatment
AssigneeAir Products and Chemicals, Inc.
InventorsPeng Zhang, Brenda Faye Ross
Life of this patent
Estimating the term…
Abstract
Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce defects when employed as a rinse solution either during or after the development of the CMP processing. Also disclosed is a method for reducing the number of defects on a plurality of post-CMP processed substrates employing the process solution of the present invention.
Claims10
A method for treating a post-CMP processed substrate, the method comprising:
- providing the post-CMP processed substrate comprising a semiconductor material;
- and
- contacting the post-CMP processed substrate with a process solution consisting of a solvent selected from water, a non-aqueous solvent selected from the group consisting of a hydrocarbon, a halocarbon, an ether, a nitrile, an aromatic compound selected from the group consisting of benzotrifluoride, cyclohexanone, benzophenone, naphthalene, diphenyl sulfone, terphenyl, m-cresol, diphenyl ether, phenol, and combinations thereof, a lactate, a pyruvate, an alcohol, and combinations thereof, and combinations of water and the non-aqueous solvent and about 10 ppm to about 500,000 ppm of at least one surfactant having the formula (I) and (II):
- wherein R1 and R4 are each independently a straight or a branched alkyl group having from 3 to 10 carbon atoms;
- R2 and R3 are each independently a hydrogen atom or an alkyl group having from 1 to 5 carbon atoms;
- and m, n, p, and q are each independently a number that ranges from 0 to 20.
3 more elements
A method for treating a post-CMP processed substrate, the method comprising:
- providing the post-CMP processed substrate comprising a semiconductor material;
- and
- contacting the post-CMP processed substrate with a process solution consisting of:
- a solvent selected from water, an at least one alcohol, and combinations of water and the at least one alcohol and about 10 ppm to about 500,000 ppm of at least one surfactant having the formula (I) and (II):
- wherein R1 and R4 are each independently a straight or a branched alkyl group having from 3 to 10 carbon atoms;
- R2 and R3 are each independently a hydrogen atom or an alkyl group having from 1 to 5 carbon atoms;
- and m, n, p, and q are each independently a number that ranges from 0 to 20.
4 more elements
A method for treating a post-CMP processed substrate, the method comprising:
- providing the post-CMP processed substrate comprising a semiconductor material;
- and
- contacting the post-CMP processed substrate with a process solution consisting of a solvent selected from water, a non-aqueous solvent selected from the group consisting of pentane, hexane, halocarbons, ethylether, tetrahydrofuran, ethylene glycol monomethyl ether, 2-methoxyethyl ether, benzotrifluoride, acetone, 1,4-dioxane, 1,3-dioxolane, ethyl acetate, cyclohexanone, acetone, methyl ethyl ketone, dimethylformam ide, dimethylacetam ide, N-methyl pyrrolidone, ethylene carbonate, propylene carbonate, glycerol and derivatives thereof, naphthalene, acetic acid anhydride, propionic acid, propionic acid anhydride, dimethyl sulfone, benzophenone, diphenyl sulfone, phenol, m-cresol, dimethyl sulfoxide, diphenyl ether, terphenyl, propylene glycol propyl ether (PGPE), methanol, ethanol, 3-heptanol, 2-methyl-1-pentanol, 5-methyl-2-hexanol, 3-hexanol, 2-heptanol, 2-hexanol, 2,3-dimethyl-3-pentanol, propylene glycol methyl ether acetate (PGMEA), ethylene glycol, isopropyl alcohol (IPA), n-butyl ether, 1-butoxy-2-propanol, 2-methyl-3-pentanol, 2-methoxyethyl acetate, 2-butoxyethanol, 2-ethoxyethyl acetoacetate, 1 -pentanol, and propylene glycol methyl ether, and combinations of water and the non-aqueous solvent and about 10 ppm to about 500,000 ppm of at least one surfactant having the formula (I) and (II):
- wherein R1 and R4 are each independently a straight or a branched alkyl group having from 3 to 10 carbon atoms;
- R2 and R3 are each independently a hydrogen atom or an alkyl group having from 1 to 5 carbon atoms;
- and m, n, p, and q are each independently a number that ranges from 0 to 20.
3 more elements
Dependencies are inferred from the claim text.