US 7,452,257 B2Granted

Method of manufacturing a display device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsKaoru Tsuchiya, Ayumi Ishigaki, Keiko Saito

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Abstract

In order to suppress defect modes such as shrinkage or unevenness in light-emission in a light emitting element and to shorten a time needed for a pretreatment for forming a layer containing an organic compound (EL layer), according to the present invention, a light emitting element is formed by forming a first electrode that is electrically connected to a source region or a drain region of a thin film transistor, forming an insulating film to cover an edge portion of the first electrode, performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen, then, forming a layer containing an organic compound (EL layer) over the first electrode and the insulating film, and forming a second electrode over the layer containing an organic compound (EL layer).

Claims29

Dependent claims

A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:

forming a first interlayer insulating film including a photosensitive organic material over the thin film transistor;
selectively etching the first interlayer insulating film such that an upper edge portion of the first interlayer insulating film has a curved surface;
forming a second interlayer insulating film covering the first interlayer insulating film and including at least one selected from the group consisting of a silicon nitride, a silicon oxynitride, and an aluminum oxynitride;
forming a contact hole in the first interlayer insulating film and the second interlayer insulating film;
forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor through the contact hole;
forming an insulating film to cover an edge portion of the first electrode, wherein an upper edge portion of the insulating film has a curved surface;
performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen;
forming a layer containing an organic compound over the first electrode and the insulating film;
and
forming a second electrode over the layer containing the organic compound.

7 more elements

A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:

forming a first interlayer insulating film including a photosensitive organic material over the thin film transistor;
selectively etching the first interlayer insulating film such that an upper edge portion of the first interlayer insulating film has a curved surface;
forming a second interlayer insulating film covering the first interlayer insulating film and including at least one selected from the group consisting of a silicon nitride, a silicon oxynitride, and an aluminum oxynitride;
forming a contact hole in the first interlayer insulating film and the second interlayer insulating film;
forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor through the contact hole;
forming an insulating film to cover an edge portion of the first electrode, wherein an upper edge portion of the insulating film has a curved surface;
cleaning the first electrode and the insulating film;
performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen;
forming a layer containing an organic compound over the first electrode and the insulating film;
and
forming a second electrode over the layer containing the organic compound.

8 more elements

A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:

forming a first interlayer insulating film including a photosensitive organic material over the thin film transistor;
selectively etching the first interlayer insulating film such that an upper edge portion of the first interlayer insulating film has a curved surface;
forming a second interlayer insulating film covering the first interlayer insulating film and including at least one selected from the group consisting of a silicon nitride, a silicon oxynitride, and an aluminum oxynitride;
forming a contact hole in the first interlayer insulating film and the second interlayer insulating film;
forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor through the contact hole;
forming an insulating film to cover an edge portion of the first electrode, wherein an upper edge portion of the insulating film has a curved surface;
performing vacuum heating to the first electrode and the insulating film;
performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen;
forming a layer containing an organic compound over the first electrode and the insulating film;
and
forming a second electrode over the layer containing the organic compound.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/736,790Filed 17 Dec 2003
Priority: JP 2002/38045727 Dec 2002
Published: US 2004/0246432 A19 Dec 2004
Granted: 18 Nov 2008
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H05B 33/26
Light sources with substantially two-dimensional [2D] radiating surfaces: characterised by the composition or arrangement of the conductive…
H05B 33/10
Electroluminescent light sources: apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H10K 59/122
Active-matrix OLED [AMOLED] displays: pixel-defining structures or layers, e.g. banks
H10K 59/8051
Electrodes: anodes