Magnetic transduction sensor device, manufacturing process and detection process therefrom
AssigneeC.R.F. Societa Consortile per Azioni
InventorsDaniele Pullini, Piero Perlo
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AssigneeC.R.F. Societa Consortile per Azioni
InventorsDaniele Pullini, Piero Perlo
Estimating the term…
A magnetic pressure sensor device comprises at least one magnetic layer able to vary a magnetisation associated thereto in response to a pressure (P) exerted thereon. The device comprises a plurality of layers arranged in a stack, the magnetic layer able to vary a magnetisation associated thereto in response to a pressure (P) comprising a free magnetic layer, able to be associated to a temporary magnetisation (MT), the free magnetic layer belonging to said plurality of layers, which further comprises at least a spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP). The sensor device further comprises a compressible layer and a layer with high magnetic coercivity associated to the plurality of layers.
A magnetic transduction sensor device, of the type comprising at least one magnetic layer configured to determine a variable magnetisation (MF) in response to the variation of a physical quantity (P, T), wherein said device comprises a plurality of layers arranged in a stack, said magnetic layer configured to determine a variable magnetisation (MF), in response to the variation of a physical quantity (P, T) interacting magnetically through said variable magnetisation (MF) with a free magnetic layer, able to be associated with a temporary magnetisation (MT), said free magnetic layer belonging to said plurality of layers, which further comprises at least one spacer layer (13) and a permanent magnetic layer (12) associated to a permanent magnetisation (MP),
A magnetic transduction sensor device, of the type comprising at least one magnetic layer configured to determine a variable magnetisation (MF) in response to the variation of a physical quantity (P, T), wherein said device comprises a plurality of layers arranged in a stack, said magnetic layer configured to determine a variable magnetisation (MF), in response to the variation of a physical quantity (P, T) interacting magnetically through said variable magnetisation (MF) with a free magnetic layer, able to be associated with a temporary magnetisation (MT), said free magnetic layer belonging to said plurality of layers, which further comprises at least one spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP),
A magnetic transduction sensor device, of the type comprising at least one magnetic layer configured to determine a variable magnetisation (MF) in response to the variation of a physical quantity (P, T), wherein said device comprises a plurality of layers arranged in a stack, said magnetic layer configured to determine a variable magnetisation (MF), in response to the variation of a physical quantity (P, T) interacting magnetically through said variable magnetisation (MF) with a free magnetic layer, able to be associated with a temporary magnetisation (MT), said free magnetic layer belonging to said plurality of layers, which further comprises at least one spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP),
A magnetic transduction sensor device, of the type comprising at least one magnetic layer configured to determine a variable magnetisation (MF) in response to the variation of a physical quantity (P, T), wherein said device comprises a plurality of layers arranged in a stack, said magnetic layer configured to determine a variable magnetisation (MF), in response to the variation of a physical quantity (P, T) interacting magnetically through said variable magnetisation (MF) with a free magnetic layer, able to be associated with a temporary magnetisation (MT), said free magnetic layer belonging to said plurality of layers, which further comprises at least one spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP),
Dependencies are inferred from the claim text.