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US 7,443,899 B2Granted
Surface emitting semiconductor laser diode and manufacturing method thereof
AssigneeFuji Xerox Co., Ltd.
InventorNobuaki Ueki
Life of this patent
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Abstract
A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.
Claims13
A surface emitting semiconductor laser diode, comprising:
- a substrate;
- a first reflective layer formed over the substrate;
- an active layer formed over the first reflective layer;
- a second reflective layer formed over the active layer;
- a first conductive layer having an opening therein and formed over the second reflective layer;
- and
- an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein
- the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer, and
- the second conductive layer is electrically connected to the first conductive layer.
6 more elements
Dependencies are inferred from the claim text.