Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same
AssigneeOSRAM Opto Semiconductors GmbH
InventorsWolfgang Schmid, Klaus Streubel, Norbert Linder
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Abstract
The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
Claims19
A radiation-emitting semiconductor body with a vertical emission direction, comprising:
- a radiation-generating active layer;
- a current-conducting layer having a current-blocking region and a current-permeable region, wherein the current permeable region is configured to overlap with a defined resonator volume of an external resonator to form a vertically emitting laser;
- and
- two cladding layers of a first conduction type,
- wherein the current-conducting layer is disposed between the two cladding layers and is of a second conduction type in the current-blocking region.
A radiation-emitting semiconductor body with a vertical emission direction, comprising:
- a radiation-generating active layer;
- and
- a current-conducting layer having a current-blocking region and a current-permeable region, wherein the current permeable region is configured to overlap with a defined resonator volume of an external resonator to form a vertically emitting laser,
- wherein the current-blocking region is formed by means of at least one pn junction which in operation is a blocking pn junction.
Dependencies are inferred from the claim text.