Circuit and method of generating high voltage for programming operation of flash memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Chul Ha, Jong-Hwa Kim
Life of this patent
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Abstract
Provided is a high voltage generator for a flash memory device including a voltage pumping unit configured to generate a high voltage in response to a pumping clock signal, a transistor having a gate coupled to the high voltage and a source coupled to a program voltage, a voltage distributor coupled to the drain of the transistor, the voltage distributor configured to generate a distributor voltage, and a pumping clock controller configured to compare the distributor voltage to a reference voltage and to generate the pumping clock signal when the high voltage is less than a voltage substantially equal to the program voltage plus the threshold voltage of the transistor.
Claims8
A high voltage generator for a flash memory device comprising:
- a voltage pumping unit configured to generate a high voltage in response to a pumping clock signal;
- a transistor having a gate coupled to the high voltage and a source coupled to a program voltage;
- a voltage distributor coupled to the drain of the transistor, the voltage distributor configured to generate a distributor voltage;
- and
- a pumping clock controller configured to compare the distributor voltage to a reference voltage and to generate the pumping clock signal when the high voltage is less than a voltage substantially equal to the program voltage plus the threshold voltage of the transistor.
A high voltage generator for a flash memory device comprising:
- a voltage pumping unit configured to generate a high voltage in response to a pumping clock signal;
- a transistor having a gate coupled to the high voltage and a source coupled to a read voltage;
- a voltage distributor coupled to the drain of the transistor, the voltage distributor configured to generate a distributor voltage;
- and
- a pumping clock controller configured to compare the distributor voltage to a reference voltage and to generate the pumping clock signal when the high voltage is less than a voltage substantially equal to the program voltage plus the threshold voltage of the transistor.
Dependencies are inferred from the claim text.