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AssigneeMacronix International Co., Ltd.
InventorsChung-Kuang Chen, Ful-Long Ni, Chun-Hsiung Hung
Estimating the term…
The memory structure improves a sensing accuracy of memory cells by dividing the main array into a number of memory units and sensing memory cells of each memory units with an appropriate set of reference currents. Each of the memory units corresponds to a reference group bit value, which indicates the appropriate set of reference currents. The appropriate set of reference currents is chosen from a number of sets of selective reference currents according to the threshold voltage distribution of each of the memory units. Thus each of the memory units of the memory structure of the present invention is sensed with its own appropriate set of reference currents correctly, and the improvement of sensing accuracy is therefore achieved.
A memory structure, comprising:
A method for programming a memory, the memory comprising a plurality of memory units and a reference group bit array, each of the memory units comprising a plurality of memory cells, the memory cells of the memory units been programmed, the method comprising:
A method for reading a memory, the memory comprising a plurality of memory units, each of the memory units comprising a plurality of memory cells, the method comprising:
A memory control circuit, used in a memory, the memory having a plurality of memory units, each memory unit having a plurality of memory cells, the circuit comprising:
A memory control circuit, used in a memory, the memory having a plurality of memory units, each of the memory unit having a plurality of memory cells, the circuit comprising:
Dependencies are inferred from the claim text.