Word line voltage generator and flash memory device including the same, and method of generating word line voltage thereof

A flash memory device, comprising:

• a memory cell array including a plurality of memory cell blocks respectively having a plurality of memory cells;
• a X-decoder that decodes a row address signal and generates a row decoding signal;
• a high voltage generator that generates a drain bias voltage, a source bias voltage, and a word line voltage and supplies the drain bias voltage and the source bias voltage to a global drain selection line and a global source selection line, respectively, in response to a read command, a program command, and an erase command, and supplies the word line voltage to a part or all of a plurality of global word lines in response to the row decoding signal;
• a block selection unit that selects one of the plurality of memory cell blocks in response to the row decoding signal, and connects a local drain selection line, a local source selection line, and a plurality of local word lines of a selected memory cell block to the global drain selection line, the global source selection line, and the plurality of global word lines, respectively;
• and
• a word line voltage generator that generates a read voltage or a verify voltage, which is changed in reverse proportion to a temperature, in response to an enable control signal and a read control signal or a verify control signal, and supplies the read voltage or the verify voltage to one of the plurality of global word lines in response to the row decoding signal, during a read operation or a read operation for program verification, of the flash memory device.

A method of generating a word line voltage during a read operation or a read operation for program verification, of a flash memory device including a plurality of memory cells, the method comprising the steps of:

• generating one of reference voltages in response to, a read control signal or a verify control signal;
• generating a read voltage or a verify voltage, which is changed in reverse proportion to a temperature and is based on one of the reference voltages, as the word line voltage in response to an enable control signal;
• and
• supplying the read voltage or the verify voltage to one of a plurality of global word lines in response to a row decoding signal.