System that compensates for coupling based on sensing a neighbor using coupling
AssigneeSanDisk Corporation
InventorsYan Li, Yupin Fong
Life of this patent
Estimating the term…
Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).
Claims25
A non-volatile storage system, comprising:
- non-volatile storage elements;
- control lines in communication with said non-volatile storage elements;
- and
- a managing circuit in communication with said non-volatile storage elements and said control lines, said managing circuit determines whether said non-volatile storage elements are in a first condition, said managing circuit charges a first subset of said control lines for non-volatile storage elements determined to be in said first condition, said managing circuit determines which non-volatile storage elements have a neighbor non-volatile storage element in said first condition by sensing a second subset of said control lines for non-volatile storage elements that are not in said first condition to determine whether said first subset of said control lines have sufficiently coupled to said second subset of said control lines in response to said charging of said first subset of said control lines.
A non-volatile storage system, comprising:
- non-volatile storage elements;
- control lines in communication with said non-volatile storage elements;
- and
- a managing circuit in communication with said non-volatile storage elements and said control lines, said managing circuit comprises:
- means for determining whether said non-volatile storage elements are in a first condition,
- means for charging a first subset of said control lines for non-volatile storage elements determined to be in said first condition, and
- means for determining which non-volatile storage elements have a neighbor non-volatile storage element in said first condition by sensing a second subset of said control lines for non-volatile storage elements that are not in said first condition to determine whether said first subset of said control lines have sufficiently coupled to said second subset of said control lines in response to said charging of said first subset of said control lines.
A non-volatile storage system, comprising:
- non-volatile storage elements;
- control lines in communication with said non-volatile storage elements;
- and
- a managing circuit in communication with said non-volatile storage elements and said control lines, said managing circuit senses whether said non-volatile storage elements have threshold voltages greater than a first level, said managing circuit charges a first subset of said control lines for non-volatile storage elements that have threshold voltages greater than said first level, while said first subset of control lines are charged said managing circuit senses whether a second subset of said control lines for non-volatile storage elements that do not have threshold voltages greater than said first level have reached a first predetermined level of charge in response to said first subset of control lines being charged, said managing circuit senses data levels in said non-volatile storage elements while providing compensation to non-volatile storage elements that do not have threshold voltages greater than said first level and are connect to control lines that reached said first predetermined level of charge in response to said first subset of control lines being charged.
A non-volatile storage system, comprising:
- non-volatile storage elements;
- control lines in communication with said non-volatile storage elements;
- and
- a managing circuit in communication with said non-volatile storage elements and said control lines, said managing circuit senses whether said non-volatile storage elements have threshold voltages greater than a first level, said managing circuit charges a first subset of said control lines for non-volatile storage elements that have threshold voltages greater than said first level, while said first subset of control lines are charged said managing circuit senses whether a second subset of said control lines for non-volatile storage elements that do not have threshold voltages greater than said first level have reached a first predetermined level of charge in response to said first subset of control lines being charged, said managing circuit charges said first subset of said control lines again, while said first subset of control lines are charged again said managing circuit senses whether said second subset of said control lines have reached a second predetermined level of charge in response to said first subset of control lines being charged again, said managing circuit senses data levels while applying first compensation for non-volatile storage elements that do not have threshold voltages greater than said first level and that are connected to control lines that reached said first predetermined level of charge in response to said first subset of control lines being charged, said managing circuit senses data levels while applying second compensation for non-volatile storage elements that do not have threshold voltages greater than said first level and that are connected to control lines that reached said second predetermined level of charge in response to said first subset of control lines being charged, said managing circuit senses data levels without applying said first or second compensation for non-volatile storage elements that do not have threshold voltages greater than said first level and that are connected to control lines that do not reach said first predetermined level of charge in response to said first subset of control lines being charged.
Dependencies are inferred from the claim text.