Semiconductor memory device having redundancy circuit for replacing a defective part
AssigneeNEC Electronics Corporation
InventorMasamiti Ido
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Abstract
A semiconductor memory device has: a memory cell array including a normal region and a redundancy region; a first decoder configured to decode an address signal to generate a first decode signal; a first driver configured to select a memory cell corresponding to the first decode signal in the normal region; and a second driver configured to select a memory cell in the redundancy region when a memory cell specified by the address signal is included in a replacement-target sector in the normal region. In the first driver, the first decode signal associated with the replacement-target sector is masked continuously.
Claims12
A semiconductor memory device comprising:
- a memory cell array including a normal region and a redundancy region;
- a first decoder configured to decode an address signal to generate a first decode signal;
- a first driver configured to select a memory cell corresponding to said first decode signal in said normal region;
- and
- a second driver configured to select a memory cell in said redundancy region when a memory cell specified by said address signal is included in a replacement-target sector in said normal region,
- wherein in said first driver, said first decode signal associated with said replacement-target sector is masked continuously.
Dependencies are inferred from the claim text.