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US 7,443,637 B2Granted
Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorTsann Lin
Life of this patent
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Abstract
A giant magnetoresistance (GMR) sensor with side longitudinal bias (LB) stacks is proposed for magnetic recording at ultrahigh densities. The GMR sensor extends from a read region into two side regions. The side LB stacks overlies the GMR sensor in the two side regions, rigidly pinning sense layers through antiparallel coupling across an antiparallel coupling spacer layer. Magnetostatic interactions occur in the sense layers between the read and side regions, thereby stabilizing the sense layers in the read region.
Claims15
A magnetic head, comprising:
- a sensor having a sense layer, the sense layer having a read region and side regions flanking the read region;
- a multilayer bias stack formed above or below each of the side regions of the sense layer, the bias stack comprising an antiparallel coupling spacer layer, a ferromagnetic longitudinal bias layer, and an antiferromagnetic longitudinal pinning layer, wherein each of the bias stacks share a common longitudinal bias layer, wherein a portion of the longitudinal bias layer positioned towards the read region is nonmagnetic;
- and
- the antiparallel coupling spacer layer being positioned between the sense layer and the ferromagnetic longitudinal bias layer of each bias stack,
- wherein the side regions of the sense layer are antiparallel exchange coupled to the bias stacks;
- wherein each bias stack includes a layer of Ir-Mn-Cr.
3 more elements
A magnetic head, comprising:
- a sensor having a sense layer, the sense layer having a read region and side regions flanking the read region;
- a multilayer bias stack formed above or below each of the side regions of the sense layer, the bias stack comprising an antiparallel coupling spacer layer, a ferromagnetic longitudinal bias layer, and an antiferromagnetic longitudinal pinning layer, wherein each of the bias stacks share a common longitudinal bias layer, wherein a portion of the longitudinal bias layer positioned towards the read region is nonmagnetic;
- and
- the antiparallel coupling spacer layer being positioned between the sense layer and the ferromagnetic longitudinal bias layer of each bias stack,
- wherein the side regions of the sense layer are antiparallel exchange coupled to the bias stacks;
- wherein a net magnetic moment of the sense layer and bias stack ferromagnetic films adjacent the antiparallel coupling layer is not zero,
- wherein the bias stack further comprises a first nonmagnetic conductor layer above the longitudinal pinning layer, and a second nonmagnetic conductor layer formed above the first nonmagnetic conductor layer,
- wherein both the first nonmagnetic conductor layer and the second nonmagnetic conductor layer are formed of the same material selected from W and Rh.
5 more elements
A magnetic head, comprising:
- a sensor having a sense layer, the sense layer having a read region and side regions flanking the read region;
- a multilayer bias stack formed above or below each of the side regions of the sense layer;
- the bias stack comprising an antiparallel coupling spacer layer, a ferromagnetic longitudinal bias layer, an antiferromagnetic longitudinal pinning layer, a first nonmagnetic conductor layer above the longitudinal pinning layer, and a second nonmagnetic conductor layer formed above the first nonmagnetic conductor layer, wherein each of the bias stacks share a common longitudinal bias layer, wherein a portion of the longitudinal bias layer positioned towards the read region is nonmagnetic;
- and
- an antiparallel coupling layer positioned between the sense layer and each bias stack,
- wherein the side regions of the sense layer are antiparallel exchange coupled to the bias stacks,
- wherein each bias stack includes a layer of Ir-Mn-Cr.
4 more elements
Dependencies are inferred from the claim text.