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US 7,443,245 B2Granted
High frequency power amplifier circuit and electronic component for high frequency power amplifier
AssigneeRenesas Technology Corp.
InventorsHirokazu Tsurumaki, Hiroyuki Nagai, Tomio Furuya, Makoto Ishikawa
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Abstract
In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.
Claims8
A high frequency power amplifier circuit, comprising:
- a power amplifying element for amplifying a high frequency signal;
- and
- a current-voltage converting element for converting a current into a voltage by applying a predetermined current,
- wherein a voltage corresponding to the voltage generated by said current-voltage converting element is applied to a control pin of said power amplifying element thereby to make flow a current that is proportional to the current flowing to said current-voltage converting element, and
- wherein said power amplifying element comprises a field-effect transistor of a dual gate having a first gate and a second gate, and includes a bias control circuit that can independently set a bias voltage of said first gate and said second gate.
2 more elements
Dependencies are inferred from the claim text.