High frequency amplifier having an attenuator
AssigneeFujitsu Limited
InventorHideki Kanou
Life of this patent
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Abstract
An amplifier for amplifying a reception signal, having an input terminal for inputting the reception signal from an antenna, has a grounded gate transistor of which gate is grounded in a high frequency manner and of which source is connected to the input terminal, a load element disposed between the drain of the transistor and a power supply, an output terminal connected to a connection node between the drain and the load element, and an attenuator selectively inserted between the drain and the output terminal.
Claims16
An amplifier for amplifying a reception signal, having an input terminal for inputting the reception signal from an antenna, comprising:
- a grounded gate transistor of which gate is grounded in a high frequency manner and of which source is connected to the input terminal;
- a load element disposed between the drain of the transistor and a power supply;
- an output terminal connected to a connection node between the drain and the load element;
- and
- an attenuator having a first terminal and a second terminal, and the first terminal and the second terminals being selectively connected to the drain and the output terminal respectively.
An amplifier for amplifying a reception signal, having an input terminal for inputting the reception signal from an antenna, comprising:
- a grounded gate transistor of which gate is grounded in a high frequency manner and of which source is connected to the input terminal;
- a load element disposed between the drain of the transistor and a power supply;
- an output terminal connected to a connection node between the drain and the load element;
- an attenuator selectively inserted between the drain and the output terminal;
- a first switch transistor disposed between the drain of the grounded gate transistor and the output terminal;
- a second switch transistor disposed between the drain and the attenuator;
- and
- a third switch transistor disposed between the attenuator and the output terminal,
- wherein the first switch transistor is in a conducting state when the second and the third switch transistors are in a non-conducting state.
An amplifier for amplifying a reception signal, having an input terminal for inputting the reception signal from an antenna, comprising:
- a grounded gate transistor of which gate is grounded in a high frequency manner and of which source is connected to the input terminal;
- a load element disposed between the drain of the transistor and a power supply;
- an output terminal connected to a connection node between the drain and the load element;
- and
- an attenuator selectively inserted between the drain and the output terminal,
- wherein the gate of the grounded gate transistor is connected to the ground via a capacitance element, and also connected to a first bias voltage via a resistance element, and the source is connected to a second bias voltage via an inductor.
Dependencies are inferred from the claim text.