Light emitting device and electronic equipment
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Junya Maruyama, Keiichi Ogura, Toru Takayama
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Abstract
A highly reliable light-emitting device is provided in which an organic light-emitting device is not degraded by oxygen, moisture, and the like. The organic light-emitting device is press-fit in vacuum using a wrapping film (105) that is covered with a DLC film (or a silicon nitride film, an AlN film, a film of a compound expressed as AlNXOY) (106) containing Ar. The organic light-emitting device thus can be completely shut off from the outside, and moisture, oxygen, or other external substances that accelerate degradation of an organic light emitting layer can be prevented from entering the organic light-emitting device.
Claims68
An electronic device comprising:
- a plurality of thin film transistors formed over a substrate;
- a first film formed over the substrate and the plurality of thin film transistors, and covers at least two surfaces of the substrate,
- wherein a second film comprising a rare gas element and an inorganic material is formed between the first film and the plurality of thin film transistors.
An electronic device comprising:
- a plurality of thin film transistors formed over a substrate;
- a first film formed over the substrate and the plurality of thin film transistors, and covers at least one side surface of the substrate,
- wherein a second film comprising a rare gas element and a carbon is formed between the first film and the plurality of thin film transistors.
An electronic device comprising:
- a plurality of thin film transistors formed over a substrate;
- a first film wrapping the substrate and the plurality of thin film transistors,
- wherein an inner surface facing the substrate of the first film is covered with a second film comprising a rare gas element and a silicon oxynitride.
An electronic device comprising:
- a plurality of thin film transistors formed over a substrate;
- a first film wrapping the substrate and the plurality of thin film transistors,
- wherein an inner surface facing the substrate of the first film is covered with a second film comprising a rare gas element and a silicon nitride.
An electronic device comprising:
- a plurality of thin film transistors formed over a substrate;
- a first film wrapping the substrate and the plurality of thin film transistors,
- wherein an inner surface facing the substrate of the first film is covered with a second film comprising a rare gas element and an AlNXOY.
An electronic device comprising:
- a plurality of thin film transistors formed over a substrate;
- a first film wrapping the substrate and the plurality of thin film transistors,
- wherein an inner surface facing the substrate of the first film is covered with a second film comprising a rare gas element and an AlN.
An electronic device, comprising:
- a transistor formed over a substrate,
- an insulating layer formed over the transistor,
- a first film covering the insulating layer,
- a second film formed over the first film, and
- a flexible printed substrate attached to the substrate,
- wherein the second film comprises a rare gas element and an inorganic material,
- wherein the first film covers bottom and side surfaces of the substrate,
- wherein the first film comprises an opening,
- wherein the flexible printed substrate extends beyond a side edge of the substrate, a side edge of the first film, and a side edge of the second film, and
- wherein the flexible printed substrate is electrically connected to the transistor through the opening.
An electronic device, comprising:
- a substrate
- a light emitting device formed over the substrate,
- a lead-out wiring line,
- a first film,
- a second film, and
- a flexible printed substrate attached to the substrate,
- wherein the second film comprises a rare gas element and an inorganic material,
- wherein the second film is formed over the first film,
- wherein the first film wraps the light emitting device,
- wherein the first film comprises an opening,
- wherein the flexible printed substrate extends beyond a side edge of the substrate, a side edge of the first film, and a side edge of the second film, and
- wherein the flexible printed substrate is electrically connected to the lead-out wiring line through the opening.
An electronic device, comprising:
- at least one transistor formed over a substrate;
- a protective film formed over the at least one transistor;
- a first film formed so as to cover the protective film;
- a wrapping film formed around the first film;
- a second film formed around the wrapping film;
- and
- a flexible printed substrate,
- wherein the second film comprises a rare gas element and an inorganic material,
- wherein the first film is formed in contact with and covers a bottom surface and side surfaces of the substrate,
- wherein the first film includes an opening therein, and
- wherein the flexible printed substrate is formed through the opening in the first film and is electrically connected to the transistor through the opening.
Dependencies are inferred from the claim text.