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US 7,443,032 B2Granted
Memory device with chemical vapor deposition of titanium for titanium silicide contacts
AssigneeMicron Technology, Inc.
InventorsGurtej Singh Sandhu, Donald L. Westmoreland
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Abstract
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
Claims4
A memory device, comprising:
- a memory array, including a control circuit and an I/O circuit operatively coupled to the memory array;
- and
- wherein at least one of the memory array, control circuit and I/O circuit further comprises:
- a layer of a titanium alloy formed overlying walls of a contact hole, wherein the titanium alloy comprises titanium and an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony;
- and
- a titanium silicide contact having a composition that is different from the layer of titanium alloy, the contact being directly coupled to the layer of titanium alloy
- wherein the titanium alloy comprises titanium and zinc.
4 more elements
Dependencies are inferred from the claim text.