US 7,443,029 B2 · Adhesion of copper and etch stop layer for copper alloy

Abstract

A new method and structure is provided for the creation of a copper dual damascene interconnect. A dual damascene structure is created in the layer of dielectric, optionally a metal barrier layer is deposited over exposed surfaces of the dual damascene structure. A copper seed layer is deposited, the dual damascene structure is filled with copper. An anneal is applied to the created copper interconnect after which excess copper is removed from the dielectric. Of critical importance to the invention, a thin layer of oxide is then deposited as a cap layer over the copper dual damascene interconnect, an etch stop layer is then deposited over the thin layer of oxide for continued upper-level metallization.

Claims15

Dependent claims

A copper interconnect having improved adhesion, comprising:

a substrate comprising semiconductors in or over the surface thereof, further comprising at least one contact point of first level copper;
at least one interconnect opening through layers of material over the substrate aligned with the at least one contact point;
at least one annealed copper interconnect comprising:
(i) doped copper seed layer over inside surfaces of the at least one interconnect opening, wherein the doped copper seed layer includes a doping element;
and
(ii) a layer of copper over the doped copper seed layer, filling the at least one interconnect opening;
and
an oxide based layer over the layers of material, including the at least one annealed copper interconnect, wherein the oxide based layer includes the doping element.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/201,845Filed 11 Aug 2005 · division

Priority

11 Jul 2003

Published

US 2005/0006776 A115 Dec 2005

Granted

28 Oct 2008

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10W 20/033
Of conductive barrier, adhesion or liner layers: in openings in dielectrics
H10W 20/043
The barrier, adhesion or liner layers being seed or nucleation layers: for electroplating
H10W 20/047
Of conductive barrier, adhesion or liner layers: by introducing additional elements therein
H10W 20/0526
By treatments not introducing additional elements therein: by thermal treatment thereof

Adhesion of copper and etch stop layer for copper alloy

Life of this patent

Adhesion of copper and etch stop layer for copper alloy

Life of this patent

Abstract

Claims15