Trench isolation structure having an implanted buffer layer
AssigneeTexas Instruments Incorporated
InventorsRick L. Wise, Mark S. Rodder
Life of this patent
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Abstract
The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure (130), in one embodiment, includes a trench located within a substrate (110), the trench having an implanted buffer layer (133) located in the sidewalls thereof. The trench isolation structure (130) further includes a barrier layer (135) located over the implanted buffer layer (133), and fill material (138) located over the barrier layer (135) and substantially filling the trench.
Claims8
A trench isolation structure, comprising:
- a substrate having a first substrate portion formed on a silicon germanium portion;
- a trench located within the first substrate portion and the silicon germanium portion, the trench having sidewalls and a bottom surface;
- an implanted buffer layer located in the sidewalls of the trench, wherein the implanted buffer layer includes an implanted first dopant species;
- and
- fill material located over the implanted buffer layer, the fill material substantially filling the trench.
Dependencies are inferred from the claim text.