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US 7,442,997 B2Granted
Three-dimensional memory cells
OwnerGuobiao Zhanginventor
Life of this patent
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Abstract
The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a better integratibility. The present invention further discloses a 3D-M with seamless 3D-ROM cells. Seamless 3D-ROM can ensure a better manufacturing yield.
Claims8
A polarized 3D-ROM (three-dimensional read-only memory) cell, comprising:
- first and second conductive layers;
- and
- a polarized quasi-conductive layer between said first and second conductive layers, said polarized quasi-conductive layer comprising first and second sub-layers of different base materials;
- whereby said polarized quasi-conductive layer has a lower resistance when the current flows in one direction than when the current flows in the opposite direction.
1 more element
Dependencies are inferred from the claim text.