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US 7,442,994 B2Granted
CMOS image sensor and method for manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorHyeon Woo Ha
Life of this patent
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Abstract
A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiodes region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.
Claims8
A method for manufacturing a CMOS image sensor comprising:
- preparing a transparent substrate including an active area, having a photodiode region and a transistor region, and a field area for isolation of the active area;
- forming a black matrix layer on the transparent substrate excluding the photodiode region;
- forming a color filter layer on the transparent substrate corresponding to the photodiode region;
- forming an insulating layer on the transparent substrate including the black matrix layer and the color filter layer;
- forming a p-type semiconductor layer on the transparent substrate of the active area including the color filter layer and the black matrix layer;
- forming a gate insulating layer and a plurality of gate electrodes on the p-type semiconductor layer of the transistor region;
- forming a photodiode including a n-type impurity region and a p-type impurity region in the p-type semiconductor layer of the photodiode region;
- and
- forming a source region and a drain region by implanting n-type impurity ions into the p-type semiconductor layer between each of the plurality of gate electrodes,
- wherein forming the p-type semiconductor layer includes:
- depositing a polysilicon layer doped with p-type impurity ions or an amorphous silicon layer doped with p-type impurity ions on the surface of the transparent substrate including the black matrix layer and the color filter layer;
- and
- selectively removing the polysilicon layer doped with p-type impurity ions or the amorphous silicon layer doped with p-type impurity ions from the field area.
10 more elements
A method for manufacturing a CMOS image sensor comprising:
- preparing a transparent substrate including an active area, having a photodiode region and a transistor region, and a field area for isolation of the active area;
- forming a black matrix layer on the transparent substrate excluding the photodiode region;
- forming an insulating layer on the transparent substrate including the black matrix layer;
- forming a p-type semiconductor layer on the transparent substrate of the active area including the black matrix layer;
- forming a gate insulating layer and a plurality of gate electrodes on the p-type semiconductor layer of the transistor region;
- forming a photodiode including an n-type impurity region and a p-type impurity region in the p-type semiconductor layer of the photodiode region;
- and
- forming a source region and a drain region by implanting n-type impurity ions into the p-type semiconductor layer between each of the plurality of gate electrodes,
- wherein forming the p-type semiconductor layer includes:
- depositing a polysilicon layer doped with p-type impurity ions or an amorphous silicon layer doped with p-type impurity ions on the surface of the transparent substrate including the black matrix layer and the color filter layer;
- and
- selectively removing the polysilicon layer doped with p-type impurity ions or the amorphous silicon layer doped with p-type impurity ions from the field area.
9 more elements
A method for manufacturing a CMOS image sensor comprising:
- preparing a transparent substrate including an active area, having a photodiode region and a transistor region, and a field area for isolation of the active area;
- forming a color filter layer on the rear surface of the transparent substrate corresponding to the photodiode region;
- forming an insulating layer on the transparent substrate including the color filter layer;
- forming a p-type semiconductor layer on the transparent substrate of the active area including the color filter layer;
- forming a gate insulating layer and a plurality of gate electrodes on the p-type semiconductor layer of the transistor region;
- forming a photodiode including an n-type impurity region and a p-type impurity region in the p-type semiconductor layer of the photodiode region;
- and
- forming a source region and a drain region by implanting n-type impurity ions into the p-type semiconductor layer between each of the plurality of gate electrodes,
- wherein forming the p-type semiconductor layer includes:
- depositing a polysilicon layer doped with p-type impurity ions or an amorphous silicon layer doped with p-type impurity ions on the surface of the transparent substrate including the black matrix layer and the color filter layer;
- and
- selectively removing the polysilicon layer doped with p-type impurity ions or the amorphous silicon layer doped with p-type impurity ions from the field area.
9 more elements
Dependencies are inferred from the claim text.