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US 7,442,992 B2Granted
Bonded SOI substrate, and method for manufacturing the same
AssigneeSumco Corporation
InventorsShinichi Tomita, Masahide Tsutsumi
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Abstract
This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.
Claims10
A bonded SOI substrate, comprising:
- an SOI layer having a low density dopend impurity layer and a high density doped impurity layer which is adjacent to the low density doped impurity layer and in which dopants are present at a high density that is higher than that of the low density doped impurity layer;
- a wafer for a support substrate which supports said SOI layer;
- and
- a buried insulating film which bonds said SOI layer with said wafer for a support substrate,
- wherein said high density doped impurity layer is positioned on said buried insulating layer,
- the low density doped impurity layer is positioned on the high density doped impurity layer, and
- gettering sites including lattice defects are formed by heat-treating the high density doped impurity layer and are positioned at the boundary between the high density doped impurity layer and the buried insulated film.
4 more elements
A bonded SOI substrate, comprising:
- an SOI layer having low density doped impurity layer and a high density doped impurity layer which is adjacent to the low density doped impurity layer obtained by heat-treating an ion implantation layer in which dopants are implanted at a high density that is higher than that of the low density doped impurity layer;
- a wafer for a support substrate which supports said SOI layer;
- and
- a buried insulating film which bonds said SOI layer with said wafer for a support substrate,
- wherein the high density doped impurity layer is positioned on the buried insulating layer,
- the low density doped impurity layer is positioned on the high density doped impurity layer, and
- gettering sites including lattice defects are formed by heat-treating the ion implantation layer and are positioned at the boundary between the high density doped impurity layer and the buried insulating film.
4 more elements
Dependencies are inferred from the claim text.