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US 7,442,988 B2Granted
Semiconductor devices and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Woo Oh, Ki-Whan Song
Life of this patent
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Abstract
Disclosed is a semiconductor device and method of fabricating the same. The device is disposed on a substrate, including a fin constructed with first and second sidewalls, a first gate line formed in the pattern of spacer on the first sidewall of the fin, and a second gate line formed in the pattern of spacer on the second sidewall of the fin. First and second impurity regions are disposed in the fin. The first and second impurity regions are isolated from each other and define a channel region in the fin between the first and second gate lines.
Claims19
A semiconductor device comprising:
- a fin disposed on a substrate, the fin having first and second sidewalls opposite to each other;
- a first gate line formed on the first sidewall of the fin in the shape of a spacer;
- a second gate line formed on the second sidewall of the fin in the shape of a spacer;
- first and second impurity layers isolated from each other in the fin, forming a channel region in the fin between the first and second gate lines;
- an interlevel insulation pattern covering the substrate and the first and the second gate lines around the fin;
- and
- the first and second bit lines each directly connected to respective one of the first and second impurity layers, intersecting the fin in parallel, and being isolated from each other.
4 more elements
Dependencies are inferred from the claim text.