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US 7,442,983 B2Granted
Method for making a semiconductor device having a high-k gate dielectric
AssigneeIntel Corporation
InventorsMark L. Doczy, Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin K. Brask, Jack Kavalieros, Matthew V. Metz, Adrian B. Sherrill, Markus Kuhn, Robert S. Chau
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Abstract
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
Claims7
A semiconductor device comprising:
- a substrate;
- a graded gate dielectric layer above said substrate, wherein said graded gate dielectric layer comprises a first portion nearest to said substrate and a second portion farthest from said substrate, wherein both said first and said second portions of said graded gate dielectric layer are comprised of silicon dioxide and a transition metal oxide, and wherein said first portion of said graded gate dielectric layer is comprised of a higher concentration of silicon dioxide than said second portion of said graded gate dielectric layer;
- a barrier layer above said graded gate dielectric layer;
- and
- a gate electrode above said barrier layer.
2 more elements
Dependencies are inferred from the claim text.