Capacitor having reaction preventing layer and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeok-Jun Won, Dae-Jin Kwon
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Abstract
The present invention is directed to a capacitor having a reaction preventing layer and a method forming the same. A lower electrode of silicon is formed on a substrate. An assistance layer of metal oxide or metal nitride is formed on the lower electrode. A nitridation process is performed to enable the silicon of the lower electrode, the assistance layer, and nitrogen supplied by the nitridation process to react with one another, forming a reaction preventing layer comprising metal silicon oxynitride or metal silicon nitride. A high-k dielectric film and an upper electrode are formed on the reaction preventing layer.
Claims13
A method of forming a capacitor, comprising:
- forming a lower electrode on a substrate, the lower electrode comprising silicon;
- forming an assistance layer on the lower electrode, the assistance layer comprising metal oxide or metal nitride;
- performing a nitridation process to enable the silicon of the lower electrode, the assistance layer, and nitrogen supplied by the nitridation process to react with one another to form a reaction preventing layer, the reaction preventing layer comprising metal silicon oxynitride or metal silicon nitride;
- forming a high-k dielectric film on the reaction preventing layer;
- and
- forming an upper electrode on the high-k dielectric film to cover the lower electrode.
A capacitor comprising:
- a lower electrode disposed on a substrate, the lower electrode comprising silicon;
- a reaction preventing layer disposed on the lower electrode, the reaction preventing layer comprising metal silicon oxynitride, wherein the lower electrode between the substrate and the reaction preventing layer comprises silicon, and supplies the silicon to the reaction preventing layer;
- a high-k dielectric film disposed on the reaction preventing layer;
- and
- an upper electrode disposed on the high-k dielectric film to cover the lower electrode.
A capacitor comprising:
- a lower electrode disposed on a substrate, the lower electrode comprising silicon,
- a reaction preventing layer disposed on the lower electrode, the reaction preventing layer being formed by forming an assistance layer on the lower electrode and performing a nitridation process, the reaction preventing layer comprising metal silicon oxynitride, wherein the lower electrode between the substrate and the reaction preventing layer comprises silicon, and supplies the silicon to the reaction preventing layer;
- a high-k dielectric film disposed on the reaction preventing layer;
- and
- an upper electrode disposed on the high-k dielectric film to cover the lower electrode.
A capacitor comprising:
- a lower electrode disposed on a substrate, the lower electrode comprising silicon;
- a reaction preventing layer disposed on the lower electrode, the reaction preventing layer comprising metal silicon oxynitride, wherein the metal silicon oxynitride is aluminum silicon oxynitride;
- a high-k dielectric film disposed on the reaction preventing layer;
- and
- an upper electrode disposed on the high-k dielectric film to cover the lower electrode.
A capacitor comprising:
- a lower electrode disposed on a substrate, the lower electrode comprising silicon,
- a reaction preventing layer disposed on the lower electrode, the reaction preventing layer being formed by forming an assistance layer on the lower electrode and performing a nitridation process, the reaction preventing layer comprising metal silicon oxynitride, wherein the assistance layer comprises aluminum oxide, so that the reaction preventing layer comprises aluminum silicon oxynitride;
- a high-k dielectric film disposed on the reaction preventing layer;
- and
- an upper electrode disposed on the high-k dielectric film to cover the lower electrode.
Dependencies are inferred from the claim text.