CMOS image sensor and method for fabricating the same
AssigneeDongbu Electronics Co., Ltd.
InventorChang Eun Lee
Life of this patent
Estimating the term…
Abstract
A CMOS image sensor and a method for fabricating the same prevent a lifting effect of microlenses. Also, a diffused reflection of microlenses is prevented. The CMOS image sensor includes photodiodes, an interlayer insulating layer, metal lines formed in the interlayer insulating layer to electrically connect the respective photodiodes with each other, an oxide layer, a passivation layer to protect the CMOS image sensor from external sources, and microlenses formed to pass through the passivation layer at portions corresponding to the photodiodes.
Claims12
A CMOS image sensor comprising:
- photodiodes formed in a semiconductor substrate;
- an interlayer insulating layer formed on the semiconductor substrate;
- metal lines formed in the interlayer insulating layer to electrically connect the respective photodiodes with each other;
- an oxide layer formed on the interlayer insulating layer;
- a passivation layer dividedly formed on the oxide layer;
- and
- microlenses formed on the oxide layer below the passivation layer, wherein the microlenses are formed on portions corresponding to the photodiodes.
A method for fabricating a CMOS image sensor comprising:
- forming photodiodes in a semiconductor substrate;
- forming an interlayer insulating layer on the semiconductor substrate;
- forming metal lines in the interlayer insulating layer to electrically connect the respective photodiodes with each other;
- forming an oxide layer on the interlayer insulating layer;
- forming a passivation layer on the oxide layer;
- selectively etching the passivation layer to expose the oxide layer corresponding to the photodiodes;
- and
- forming microlenses on the oxide layer on portions corresponding to the photodiodes.
Dependencies are inferred from the claim text.