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US 7,442,974 B2Granted
Image sensor with inter-pixel isolation
OwnerHiok Nam Tayinventor
Life of this patent
Estimating the term…
Abstract
An image sensor with a plurality of photodiodes that each have a first region constructed from a first type of material and a second region constructed from a second type of material. Located adjacent to the first region and between second regions of adjacent photodiodes is a barrier region. The photodiodes are reversed biased to create depletion regions within the first regions. The barrier region limits the lateral growth of the depletions regions and inhibits depletion merger between adjacent photodiodes.
Claims14
An image sensor, comprising:
- a pixel array that includes a plurality of photodiodes that each have;
- a first region constructed from a first type of material;
- a second region constructed from a second type of material;
- and,
- a barrier region that is constructed from said first type of material, and located beneath said first region and between second regions of adjacent photodiodes.
2 more elements
An image sensor, comprising:
- a pixel array that includes a plurality of photodiodes that each have;
- a first region constructed from a first type of material;
- a second region that has a depletion region and is constructed from a second type of material;
- and,
- a barrier means for inhibiting lateral growth of said depletion region.
2 more elements
A method for forming a plurality of photodiodes of an image sensor, comprising:
- forming a barrier region on a substrate;
- forming a first region over the barrier region;
- and,
- forming a plurality of second regions on the substrate, the barrier region being located between the second regions.
1 more element
Dependencies are inferred from the claim text.