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US 7,442,967 B2Granted
Strained channel complementary field-effect transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hsin Ko, Yee-Chia Yeo, Wen-Chin Lee, Chenming Hu
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Abstract
A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.
Claims7
A transistor comprising:
- a gate dielectric overlying a channel region;
- a source region and a drain region on opposing sides of the channel region, the channel region comprising a first semiconductor material and the source and drain regions comprising a second semiconductor material, the first semiconductor material having a first lattice constant, the second semiconductor material having a second lattice constant different than the first lattice constant;
- a gate electrode overlying the gate dielectric;
- and
- first and second spacers formed on sides of the gate electrode, each of the spacers including a void adjacent the channel region.
2 more elements
Dependencies are inferred from the claim text.