A method for manufacturing a thin film transistor comprising a gate electrode, source and drain electrodes electrically insulated from the gate electrode, and a semiconductor active layer electrically insulated from the gate electrode and including source and drain regions coupled to the source and drain electrodes, respectively, the source and drain electrodes being disposed between the gate electrode and the source and drain regions, and a channel region coupling the source and drain regions, the method comprising:
- forming the semiconductor active layer;
- and
- forming a groove in the semiconductor active layer that isolates the semiconductor active layer from a semiconductor active layer of an adjacent thin film transistor such that a semiconductor film is arranged between the semiconductor active layer and the semiconductor active layer of the adjacent thin film transistor.