Thin film semiconductor device
AssigneeHitachi, Ltd.
InventorsShinya Yamaguchi, Mutsuko Hatano, Mitsuharu Tai, Sedng-Kee Park, Takeo Shiba
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Abstract
A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
Claims4
A thin film semiconductor device comprising an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof, wherein:
- the Si thin film comprises a polycrystal where a plurality of narrow, rectangular crystal grains are arranged, being spaced apart from each other;
- the Si thin film is not present between the rectangular crystal grains;
- and
- surface of the rectangular crystal grains are flat in one direction and convex in a direction perpendicular to said one direction.
An image display device including a thin film semiconductor device comprising an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof, wherein:
- the Si thin film comprises a polycrystal where a plurality of narrow, rectangular crystal grains are arranged, being spaced apart to each other;
- the Si thin film is not present between the rectangular crystal grains;
- and
- surfaces of the rectangular crystal grains are flat in one direction and convex in a direction perpendicular to said one direction.
Dependencies are inferred from the claim text.