Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a flexible film;
• and
• a layer adjacent to the flexible film, including a plurality of elements,
• wherein all channel length directions of the plurality of elements are arranged with a first direction,
• wherein the flexible film is capable of being bent at least in a second direction,
• wherein the layer is capable of being bent at least in the second direction, and
• wherein the first direction is different from the second direction.

A semiconductor device comprising:

• a layer including a plurality of elements,
• wherein all channel length directions of the plurality of elements are arranged with a first direction,
• wherein the layer is adjacent to a transfer body,
• wherein the transfer body has a curved surface which is bent in a second direction,
• wherein the layer is capable of being bent at least in the second direction, and
• wherein the first direction is different from the second direction.

A semiconductor device comprising:

• a layer including:
• a blocking layer;
• and
• a plurality of elements adjacent to the blocking layer,
• wherein all channel length directions of the plurality of elements are arranged with a first direction,
• wherein the layer is capable of being bent at least in a second direction, and
• wherein the first direction is different from the second direction.

A semiconductor device comprising:

• a flexible film;
• and
• a layer adjacent to the flexible film, including:
• a blocking layer;
• and
• a plurality of elements adjacent to the blocking layer,
• wherein all channel length directions of the plurality of elements are arranged with a first direction,
• wherein the flexible film is capable of being bent at least in a second direction,
• wherein the layer is capable of being bent at least in the second direction, and
• wherein the first direction is different from the second direction.

A semiconductor device comprising:

• a layer including:
• a blocking layer;
• and
• a plurality of elements adjacent to the blocking layer,
• wherein all channel length directions of the plurality of elements are arranged with a first direction,
• wherein the layer is adjacent to a transfer body,
• wherein the transfer body has a curved surface which is bent in a second direction,
• wherein the layer is capable of being bent at least in the second direction, and
• wherein the first direction is different from the second direction.