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US 7,442,946 B2Granted
Nonuniform ion implantation apparatus and method using a wide beam
AssigneeHynix Semiconductor Inc.
InventorMin Yong Lee
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Abstract
A nonuniform ion implantation apparatus comprises a wide ion beam generator for generating a wide ion beam including a plurality of wide ion beams irradiated on at least two sections among a plurality of sections into which a wafer is divided, and a wafer drive unit for vertically reciprocating the wafer while the wide ion beam generated by the wide ion beam generator is irradiated on the wafer. At least one of the wide ion beams has a dose different from that of at least another wide ion beam.
Claims6
A nonuniform ion implantation apparatus comprising:
- a wide ion beam generator, including:
- an upper magnetron assembly comprising a first upper magnetron assembly and a second upper magnetron assembly, and
- a lower magnetron assembly comprising a first lower magnetron assembly and a second lower magnetron assembly disposed below the first upper magnetron assembly and the second upper magnetron assembly, such that the first lower magnetron assembly and the second lower magnetron assembly are vertically spaced a predetermined distance from the first upper magnetron assembly and the second upper magnetron assembly,
- the upper and lower magnetron assemblies configured to generate a plurality of wide ion beams comprising at least a first wide ion beam generated between the first upper magnetron assembly and the first lower magnetron assembly and a second wide ion beam generated between the second upper magnetron assembly and the second lower magnetron assembly;
- and
- a wafer drive unit for moving a wafer on which the wide ion beam is irradiated by the wide ion beam generator.
3 more elements
Dependencies are inferred from the claim text.