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AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsShengwu Chang, Antonella Cucchetti, Joseph P. Dzengeleski, Gregory R. Gibilaro, Rosario Mollica, Gregg A. Norris, Joseph C. Olson, Marie J. Welsch
Estimating the term…
An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
A method for tuning an ion beam in an ion implanter system, the method comprising the steps of:
A system for tuning an ion beam in an ion implanter system, the system comprising:
A computer program product comprising a computer useable medium having computer readable program code embodied therein for tuning an ion beam in an ion implanter system, the program product comprising:
Dependencies are inferred from the claim text.