Cleaning composition and method of cleaning semiconductor substrate
AssigneesTokyo Ohka Kogyo Co., Ltd., Intel Corporation
InventorsShigeru Yokoi, Kazumasa Wakiya, Takayuki Haraguchi, Makarem A. Hussein, Lana I. Jong, Shan Christopher Clark
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Abstract
A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.
Claims6
A cleaning composition for cleaning a semiconductor substrate comprising a low-dielectric layer, a photoresist film, a buried material and a residue of metal, said cleaning composition comprising:
- quaternary ammonium hydroxide;
- a water-soluble organic solvent of from 2 to 85 mass percent of the total amount of the cleaning composition;
- water;
- an anticorrosive;
- and
- potassium hydroxide of from 0.001 to 0.1 mass percent of a total amount of the cleaning composition,
- wherein the water-soluble organic solvent comprises an alkanolamine-based water-soluble organic solvent and any other water-soluble organic solvent,
- the amount of the alkanolamine-based water-soluble organic solvent is in the range of from 15 to 50 mass percent of the total amount of the cleaning composition and the remaining water-soluble organic solvent is the any other water-soluble organic solvent, and
- said cleaning composition removes at least one of photoresist film, buried material and residue of metal from said semiconductor substrate, without degrading the low-dielectric layer.
Dependencies are inferred from the claim text.