High-heat conductive Si-containing material and its manufacturing method
AssigneeNGK Insulators, Ltd.
InventorsKenji Morimoto, Shinji Kawasaki, Hiroaki Sakai
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Abstract
A highly heat-conductive Si-containing material containing a Si phase whose lattice constant at room temperature is controlled at a level of more than 0.54302 nm but 0.54311 nm or less. Firing is conducted using a kiln material containing no B compound. With this highly heat-conductive Si-containing material and the process for production thereof, a reduction in heat conductivity can be prevented and a high heat conductivity can be exhibited stably.
Claims4
A process for producing a highly heat-conductive Si-containing material, comprising:
- controlling a Si phase so that its lattice constant at room temperature is at a level of more than 0.54302 nm but equal to or less than 0.54311 nm,
- by firing a silicon-silicon carbide composite material in an Ar atmosphere in a kiln using a kiln tool containing no B compound, wherein the firing temperature is approximately 1450° C.
A process for producing a highly heat-conductive Si-containing material, comprising:
- controlling a Si phase so that its lattice constant at room temperature is at a level of more than 0.54302 nm but equal to or less than 0.54311 nm,
- by firing a silicon-silicon carbide composite material in an Ar atmosphere in a kiln using a kiln tool containing no B compound, wherein the firing temperature is approximately 1450° C, so that said highly heat-conductive Si-containing material has a heat conductivity of 100 W/mK or more.
Dependencies are inferred from the claim text.