Method and apparatus for forming silicon oxide film
AssigneeTokyo Electron Limited
InventorHiroyuki Matsuura
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Abstract
A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a chlorosilane family gas, a second process gas containing a Cl-replacing gas, and a third process gas containing an oxidizing gas. This method alternately includes first to sixth steps. The first, third, and fifth steps perform supply of the first, second, and third process gases, respectively, while stopping supply of the other two process gases. Each of the second, fourth, and sixth steps stops supply of the first to third process gases. The third and fifth steps include an excitation period of supplying the second and third process gases, respectively, to the process field while exciting the respective process gases by an exciting mechanism.
Claims16
A film formation method for a semiconductor process for forming a silicon oxide film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a chlorosilane family gas, a second process gas containing a Cl-replacing gas, and a third process gas containing an oxidizing gas, the method alternately comprising, in an order set forth below:
- a first step of performing supply of the first process gas to the process field while stopping supply of the second and third process gases to the process field;
- a second step of stopping supply of the first, second, and third process gases to the process field;
- a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field, the third step comprising an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism;
- a fourth step of stopping supply of the first, second, and third process gases to the process field;
- a fifth step of performing supply of the third process gas to the process field while stopping supply of the first and second process gases to the process field, the fifth step comprising an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism;
- and
- a sixth step of stopping supply of the first, second, and third process gases to the process field.
A computer readable medium containing program instructions for execution on a processor, which is used for a film formation apparatus for a semiconductor process for forming a silicon oxide film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a chlorosilane family gas, a second process gas containing a Cl-replacing gas, and a third process gas containing an oxidizing gas, wherein the program instructions, when executed by the processor, cause the film formation apparatus to alternately execute, in an order set forth below:
- a first step of performing supply of the first process gas to the process field while stopping supply of the second and third process gases to the process field;
- a second step of stopping supply of the first, second, and third process gases to the process field;
- a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field, the third step comprising an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism;
- a fourth step of stopping supply of the first, second, and third process gases to the process field;
- a fifth step of performing supply of the third process gas to the process field while stopping supply of the first and second process gases to the process field, the fifth step comprising an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism;
- and
- a sixth step of stopping supply of the first, second, and third process gases to the process field.
Dependencies are inferred from the claim text.