Method for removing contamination and method for fabricating semiconductor device
AssigneeNEC Electronics Corporation
InventorsHidemitsu Aoki, Kaori Watanabe
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Abstract
A method for removing contamination on a semiconductor substrate is disclosed. The contamination contains at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements. The method comprises first and second process steps. The first process is wet processing the semiconductor substrate by first remover liquid that contains one of acid and alkali. The second process is wet processing the semiconductor substrate by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
Claims16
A method for removing contamination adhering to a silicon substrate rear and end faces, the contamination containing at least one element selected from zirconium (Zr) and hafnium (Hf) and wherein the contamination includes the at least one element bonded with silicon (Si), the method comprising:
- a first process of wet processing the silicon substrate by a first remover liquid that contains hydrofluoric acid, the hydrofluoric acid being a concentration equal to or greater than 30 mass %;
- and
- a second process of wet processing the silicon substrate by a second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid;
- a third process of wet processing the silicon substrate, after the second process, by a third remover liquid that contains one of hydrofluoric acid and salt of hydrofluoric acid;
- and
- a fourth process of wet processing the silicon substrate by a fourth remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
A method for fabricating a semiconductor device, comprising:
- a first process of wet processing a silicon substrate rear and end faces by a first remover liquid that contains hydrofluoric acid, the hydrofluoric acid being a concentration equal to or greater than 30 mass %, after forming a film on the silicon substrate, the film containing at least one element selected from zirconium (Zr) and hafnium (Hf) and wherein the film includes the at least one element bonded with silicon (Si);
- and
- a second process of wet processing the silicon substrate which has been wet processed in the first process, by a second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid;
- a third process of wet processing the silicon substrate, after the second process, by a third remover liquid that contains one of hydrofluoric acid and salt of hydrofluoric acid;
- and
- a fourth process of wet processing the silicon substrate, after the third process, by a fourth remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
A method for fabricating a semiconductor device, comprising:
- a first process of wet processing a silicon substrate by a first remover liquid that contains hydrofluoric acid, the hydrofluoric acid being a concentration equal to or greater than 30 mass %, after forming a film on the silicon substrate, the film containing at least one element selected from zirconium (Zr) and hafnium (Hf);
- a second process of wet processing the silicon substrate, which has been wet processed in the first process, by a second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid;
- a third process of wet processing the silicon substrate, after the second process, by a third remover liquid that contains hydrofluoric acid;
- and
- a fourth process of wet processing the silicon substrate, after the third process, by a fourth remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
Dependencies are inferred from the claim text.