Method for fabricating semiconductor device using tungsten as sacrificial hard mask

A method for fabricating a semiconductor device, comprising the steps of:

• forming a conductive layer on a substrate;
• forming an insulation layer on the conductive layer;
• forming a tungsten-based layer on the insulation layer;
• forming a photoresist pattern on the tungsten-based layer;
• etching the tungsten-based layer by using the photoresist pattern as an etch mask to form a sacrificial hard mask;
• etching the insulation layer by using at least the sacrificial hard mask as an etch mask along with a plasma containing oxygen gas to form a hard mask;
• and
• etching the conductive layer by using at least the sacrificial hard mask as an etch mask to form a conductive pattern, wherein the conductive pattern includes a stack structure of the hard mask and the conductive layer.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a conductive layer on a substrate;
• forming an insulation layer on the conductive layer;
• forming a tungsten-based layer on the insulation layer;
• forming an anti-reflective coating layer on the tungsten-based layer;
• forming a photoresist pattern on the anti-reflective coating layer;
• etching the anti-reflective coating layer by using the photoresist pattern as an etch mask;
• etching the tungsten-based layer by using at least the photoresist pattern as an etch mask to form a sacrificial hard mask
• etching the insulation layer using a plasma containing O2 gas by using at least the sacrificial hard mask as an etch mask to form a hard mask;
• and
• etching the conductive layer by using at least the sacrificial hard mask as an etch mask to form a conductive pattern including a stack structure of the hard mask and the conductive layer.