Decoupling capacitor for high frequency noise immunity

A method of forming a Metal-Insulator-Metal (MIM) decoupling capacitor, comprising:

• providing an electrode;
• providing a layer of high K dielectric over the electrode;
• doping the layer of high K dielectric with a selected distribution and composition of nano crystals to control the resistivity of the high K dielectric layer;
• and
• providing a metal top plate on the high K dielectric.

A method of forming a Metal-Insulator-Metal (MIM) capacitor for a circuit having a resonance impedance, comprising:

• providing an electrode;
• providing a high K dielectric over the electrode;
• doping the high K dielectric with a selected distribution and composition of nano crystals and a complex high K dielectric to provide the layer of high K dielectric with a desired resistance to lower the resonance impedance of the circuit;
• and
• providing a metal top plate on the high K dielectric.

A method of forming a Metal-Insulator-Metal (MIM) capacitor, comprising:

• providing an electrode;
• fabricating a high K dielectric layer over the electrode, including performing a low-temperature fabrication process near room temperature;
• doping the high K dielectric layer with a selected distribution and composition of nano crystals thereby controlling the resistivity of the high K dielectric layer;
• and
• providing a metal top plate on the high K dielectric.

A method of forming a Metal-Insulator-Metal (MIM) capacitor, comprising:

• providing an electrode;
• providing a high K dielectric layer over the electrode;
• doping the high K dielectric layer with a selected distribution and composition of silicon nano crystals thereby controlling the resistivity of the high K dielectric layer;
• and
• providing a metal top plate on the high K dielectric.

A method of forming a Metal-Insulator-Metal (MIM) capacitor, comprising:

• providing an electrode;
• providing a high K dielectric layer over the electrode;
• doping the high K dielectric layer with a selected distribution and composition of gold nano crystals to control the resistivity of the high K dielectric layer;
• and
• providing a metal top plate on the high K dielectric.

A method of forming a Metal-Insulator-Metal (MIM) capacitor, comprising:

• providing an electrode;
• providing a first titanium nitride layer on the electrode;
• providing on the titanium oxide layer a high K dielectric layer doped with a selected distribution and composition of nano crystals to control the resistivity of the high K dielectric layer;
• providing a second titanium nitride layer on the high K dielectric layer;
• and
• providing a metal top plate on the second titanium nitride layer.