Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
AssigneePresident and Fellows of Harvard College
InventorsEric Mazur, Mengyan Shen
Life of this patent
Estimating the term…
Abstract
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
Claims21
A method of processing a semiconductor substrate, comprising
- placing at least a portion of a surface of the semiconductor substrate in contact with a liquid, and
- exposing said surface portion to one or more short laser pulses so as to modify surface topography of that portion to generate surface features having heights less than about 1 micrometer.
A method of processing a substrate, comprising
- disposing a layer of a liquid over at least a portion of a surface of a substrate,
- applying a plurality of radiation pulses having pulse widths in a range of about 50 femtoseconds to about 500 femtoseconds to said portion so as to generate a plurality of surface features having heights less than about 1 micrometer.
Dependencies are inferred from the claim text.