Method of manufacturing a bipolar transistor and bipolar transistor thereof
AssigneeFreescale Semiconductor, Inc.
InventorsJay P. John, James A. Kirchgessner, Matthew W. Menner
Life of this patent
Estimating the term…
Abstract
A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154) over the base electrode layer; (c) forming a mask layer (280) over a first portion of the base electrode layer, a portion of the first portion of the emitter electrode and a portion of the semiconductor substrate; and (d) implanting a dopant into a second portion of the base electrode layer after forming the emitter electrode after forming the mask layer.
Claims20
A method of manufacturing a bipolar transistor comprising:
- forming a base electrode layer over a semiconductor substrate;
- forming a first portion of an emitter electrode over the base electrode layer;
- forming a mask layer over a first portion of the base electrode layer, a second portion of the first portion of the emitter electrode and a first portion of the semiconductor substrate;
- and
- implanting a dopant into a second portion of the base electrode layer after forming the mask layer.
A method of manufacturing a bipolar transistor comprising:
- forming a base electrode layer over a semiconductor substrate;
- forming one or more dielectric layers over the base electrode layer;
- forming an electrically conductive layer over a first portion of the base electrode layer;
- forming an etch mask layer over the electrically conductive layer;
- using the etch mask layer to pattern the electrically conductive layer to form a first portion of an emitter electrode;
- using the etch mask layer to pattern the one or more dielectric layers;
- and
- self-aligning an implant of a dopant into a second portion of the base electrode layer using the etch mask layer as an implant mask for the dopant, wherein:
- the first and second portions of the base electrode layer are adjacent to each other.
Dependencies are inferred from the claim text.