Silicon on insulator devices having body-tied-to-source and methods of making

A method of forming a transistor device, comprising:

• providing a semiconductor topography comprising a gate conductor spaced above a semiconductor layer by a gate dielectric, dielectric spacers adjacent to sidewalls of the gate conductor, and source and drain junctions laterally spaced apart by a body region in the semiconductor layer;
• and
• implanting metallic species in a bottom region of the semiconductor layer to form a conductive implant region to electrically connect the source junction to the body region;
• wherein said implanting the metallic species is directed to a backside of the semiconductor topography at an oblique angle relative to the surface of the semiconductor layer such that a drain-side of the implant region is spaced from the body region and a source-side of the implant region contacts the body region.